Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device

A compound semiconductor device comprising:

• a chip substrate as a base of a compound semiconductor chip;
• an aluminum nitride layer disposed above the chip substrate;
• a lateral semiconductor element, in which electric current flows in parallel to the chip substrate;
• and
• a compound semiconductor layer disposed between the aluminum nitride layer and the lateral semiconductor element,
• wherein a side of the aluminum nitride layer is covered by an amorphous layer or a polycrystal layer and is in direct contact with the amorphous layer or a polycrystal layer.

A compound semiconductor device comprising:

• a chip substrate as a base of a compound semiconductor chip;
• an aluminum nitride layer disposed above the chip substrate;
• and
• a compound semiconductor layer disposed above the aluminum nitride layer,
• wherein a side of the aluminum nitride layer is covered by an amorphous layer or a polycrystal layer and is in direct contact with the amorphous layer or a polycrystal layer, and
• a thickness, in a direction parallel to an upper surface of the chip substrate, of the amorphous layer or the polycrystal layer disposed on the side of the aluminum nitride layer is larger than a thickness of the compound semiconductor layer in a cross-sectional view.