Semiconductor device having through hole, source and gate electrode structures

Abstract

A semiconductor device has a through hole penetrating a substrate, an insulating film filling the through hole, a gate electrode and a source electrode. The through hole penetrates a substrate on a first side. A first gate electrode may be embedded in the insulating film. A first source electrode may be embedded in the insulating film deeper than the first gate electrode. A first width of the first opening may be larger than a second width of an internal portion of the through hole. A ratio may be established between the first width and the second width. A second source electrode may be embedded in the insulating film deeper than the first source electrode. A second gate electrode may be embedded deeper than the second source electrode in a vertical direction within the through hole. The first opening and the second opening may be laterally offset.

Dependencies are inferred from the claim text.