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US 2019/0165093 A1Published application
Insuperjunction with surrounding lightly doped drain region
OwnerPatrick M. SHEA, Samuel J. ANDERSON +1inventors
InventorsPatrick M. SHEA, Samuel J. ANDERSON, David N. OKADA
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Abstract
A semiconductor device has a substrate and a lightly doped drain (LDD) region formed in the substrate. A superjunction is formed in the LDD region.
Claims17
A semiconductor device, comprising:
- a substrate;
- a lightly doped drain (LDD) region formed in the substrate;
- and
- a superjunction formed in the LDD region, wherein a portion of the superjunction extends through the LDD region.
1 more element
A semiconductor device, comprising:
- a substrate;
- a lightly doped drain (LDD) region formed in the substrate;
- and
- a superjunction formed in the LDD region, wherein the superjunction includes a first stripe extending from a first depth in the substrate to a second depth in the substrate and a second stripe extending from the first depth in the substrate to a third depth in the substrate.
1 more element
Dependencies are inferred from the claim text.