Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-ho CHO, Sang-yeol KANG, Sun-min MOON, Young-lim PARK, Jong-born SEO
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Abstract
A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.
Claims21
A semiconductor device comprising:
- a first electrode on a substrate;
- a second electrode on the substrate;
- a dielectric layer structure-between the first electrode and the second electrode;
- and
- a crystallization inducing layer between the dielectric layer structure and the first electrode,
- wherein the dielectric layer structure includes
- a first dielectric layer including a first dielectric material, and
- a second dielectric layer on the first dielectric layer, the second dielectric layer including a second dielectric material, and
- wherein the first dielectric material includes hafnium oxide having a tetragonal crystal phase.
A semiconductor device comprising:
- a first electrode on a substrate;
- a second electrode on the substrate;
- and
- a dielectric layer structure between the first electrode and the second electrode,
- wherein the dielectric layer structure includes
- a first dielectric layer in contact with the first electrode, the first dielectric layer including a first dielectric material, and
- a second dielectric layer on the first dielectric layer, the second dielectric layer including a second dielectric material, and
- wherein the first electrode includes iridium, molybdenum, or molybdenum nitride, and the first dielectric layer includes zirconium oxide having a tetragonal crystal phase.
A semiconductor device comprising:
- a contact structure on a substrate;
- and
- a capacitor structure on the contact structure,
- wherein the capacitor structure includes
- a lower electrode electrically connected to the contact structure,
- a dielectric layer structure on the lower electrode, the dielectric layer structure including
- a first dielectric layer including a first dielectric material, and
- a second dielectric layer on the first dielectric layer, the second dielectric layer including a second dielectric material, and
- an upper electrode on the dielectric layer structure,
- wherein the dielectric layer structure includes at least one material of
- hafnium oxide having a tetragonal crystal phase, or
- zirconium oxide having a tetragonal crystal phase.
-23. (canceled)
Dependencies are inferred from the claim text.