Back to results
US 2019/0165087 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsBeom-Yong KIM, Deok-Sin KIL, Hee-Young JEON
Life of this patent
Estimating the term…
Abstract
A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.
Claims20
A method for fabricating a capacitor, the method comprising:
- forming a bottom electrode;
- forming a dielectric layer on the bottom electrode;
- forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer;
- forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer;
- and
- forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.
3 more elements
Dependencies are inferred from the claim text.