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US 2019/0165071 A1Published application
Display device
AssigneeJapan Display Inc.
InventorSatoshi MARUYAMA
Life of this patent
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Abstract
A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
Claims19
1-13. (canceled)
14:
- A display device comprising:
- a substrate including a display region and a peripheral region outside of the display region;
- a first electrode;
- a light-emitting element layer on the first electrode;
- a second electrode on the light-emitting element layer;
- a circuit layer including layers covering the peripheral region and the display region and under the first electrode;
- a first thin film transistor and a second thin film transistor in the circuit layer;
- and
- a first conductive layer under the second thin film transistor,
- wherein the first thin film transistor includes a first channel layer, a first source electrode, a first drain electrode, and a first gate electrode,
- the second thin film transistor includes a second channel layer, a second source electrode, a second drain electrode, and a second gate electrode,
- a distance between the substrate and the first channel layer is smaller than a distance between the substrate and the second channel layer,
- the first conductive layer and the second channel layer overlap with each other, and
- a distance between one end and another end of a bottom surface of the first conductive layer is smaller than a distance between one end and another end of a bottom surface of the second channel layer in a cross sectional view.
11 more elements
15:
- The display device according to claim 14,
- wherein the first conductive layer and the first gate electrode are in a same layer.
16:
- The display device according to claim 15,
- wherein the first conductive layer and the first gate electrode are a same material.
17:
- The display device according to claim 14,
- wherein the first conductive layer and the second gate electrode overlap with each other.
18:
- The display device according to claim 14,
- wherein the first conductive layer is located without overlapping the second gate electrode.
19:
- The display device according to claim 14,
- further comprising a second conductive layer under the first conductive layer.
20:
- The display device according to claim 19,
- wherein the second conductive layer and the first channel layer are in a same layer.
21:
- The display device according to claim 20,
- wherein the second conductive layer and the first channel layer are a same material.
22:
- The display device according to claim 19,
- wherein the first conductive layer, the second channel layer, and the second gate electrode overlap with each other.
23:
- The display device according to claim 22,
- further comprising a contact plug contacting the second channel layer and the second conductive layer.
24:
- A display device comprising:
- a substrate including a display region and a peripheral region outside of the display region;
- a first electrode;
- a light-emitting element layer on the first electrode;
- a second electrode on the light-emitting element layer;
- a circuit layer including layers covering the peripheral region and the display region and under the first electrode;
- a first thin film transistor and a second thin film transistor in the circuit layer;
- and
- a first conductive layer under the second thin film transistor,
- wherein the first thin film transistor includes a first channel layer, a first source electrode, a first drain electrode, and a first gate electrode,
- the second thin film transistor includes a second channel layer, a second source electrode, a second drain electrode, and a second gate electrode,
- a distance between the substrate and the first channel layer is smaller than a distance between the substrate and the second channel layer,
- the first conductive layer and the second channel layer overlap with each other, and
- the first conductive layer and the second gate electrode overlap with each other.
11 more elements
25:
- The display device according to claim 24,
- wherein the first conductive layer and the first gate electrode are in a same layer.
26:
- The display device according to claim 25,
- wherein the first conductive layer and the first gate electrode are a same material.
27:
- The display device according to claim 24,
- further comprising a second conductive layer under the first conductive layer.
28:
- The display device according to claim 27,
- wherein the second conductive layer and the first channel layer are in a same layer.
29:
- The display device according to claim 28,
- wherein the second conductive layer and the first channel layer are a same material.
30:
- The display device according to claim 27,
- wherein the first conductive layer, the second conductive layer and the second gate electrode overlap with each other.
31:
- The display device according to claim 30,
- further comprising a contact plug contacting the second channel layer and the second conductive layer.