Memory devices and related methods

Abstract

A memory device includes a plurality of memory cells, a first nonconductive separator material separating the memory cells and having a word line end and bit line end, a metal via separated from the plurality of memory cells by a second nonconductive separator material, and metal bit line electrically connecting the metal via with the plurality of memory cells. The memory cells include a phase change material layer, a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side, a metal silicon nitride layer on a surface of the bit line side of the first electrode layer. A bit line end surface of the first nonconductive separator material is at least partially free of contact with the metal silicon nitride layer.

Dependencies are inferred from the claim text.