Structures and methods for embedded magnetic random access memory (mram) fabrication
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Nicholas A. Lanzillo, Michael Rizzolo, Theodorus E. Standaert
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Abstract
A magnetic random access memory (MRAM) device includes a conductor disposed in an insulating material of a lower wiring layer, a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer, and a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the conductor to a height above the intermediary wiring layer, wherein the landing pad connects the MJT structure to the conductor.
Claims20
A magnetic random access memory (MRAM) device, comprising:
- at least one conductor disposed in an insulating material of a lower wiring layer;
- a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer;
- and
- a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the at least one conductor to a height above the intermediary wiring layer, wherein the landing pad connects the MJT structure to the at least one conductor.
A magnetic random access memory (MRAM) device, comprising:
- at least one conductor disposed in an insulating material of a lower wiring layer;
- an intermediary wiring layer having metallization lines formed in an insulating material;
- a via in the insulating material of the intermediary wiring layer down to the lower wiring layer in an MRAM region to expose the at least one conductor;
- a landing pad formed of a conductive material deposited in the via, the landing pad extending from a top surface of the at least one conductor to a height above the intermediary wiring layer and traversing multiple wiring layers in addition to the intermediary wiring layer;
- and
- a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer and in direct contact with the landing pad,
- wherein the landing pad connects the MJT structure to the at least one conductor.
A magnetic random access memory (MRAM) device, comprising:
- at least one conductor disposed in an insulating material of a lower wiring layer;
- at least two magnetic layers formed in an upper wiring layer;
- and
- a non-magnetic tunnel barrier layer separating the at least two magnetic layers, the at least two magnetic layers and the non-magnetic tunnel barrier layer being patterned to form a magnetic tunnel junction (MJT) structure;
- a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the at least one conductor to a height above the intermediary wiring layer, wherein the landing pad is in direct contact with the MJT structure and the at least one conductor;
- and
- at least one etch stop layer disposed between the lower wiring layer and the intermediary wiring layer.
Dependencies are inferred from the claim text.