Semiconductor structure and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Abstract
The present disclosure provides a semiconductor structure, including a logic region and a memory region. The memory region includes a first Nth metal line of an Nth metal layer, a magnetic tunneling junction (MTJ) over first Nth metal line, a carbon-based layer between the first Nth metal line and the MTJ, and a first (N+M)th metal via of an (N+M)th metal layer. A method of manufacturing the semiconductor structure is also disclosed.
Claims20
A semiconductor structure, comprising:
- a logic region;
- a memory region adjacent to the logic region, the memory region comprises:
- a first Nth metal line of an Nth metal layer;
- a magnetic tunneling junction (MTJ) cell over the first Nth metal line;
- a carbon-based layer between the first Nth metal line and the MTJ cell;
- and
- a first (N+M)th metal layer being disposed over the MTJ cell,
- wherein N is an integer greater than or equal to 1, and M is an integer greater than or equal to 1.
A method for manufacturing a semiconductor structure, the method comprising:
- forming a first Nth metal line;
- forming a carbon-based layer over the first Nth metal line;
- forming a bottom electrode via in the carbon-based layer;
- forming a magnetic tunneling junction (MTJ) multilayer over the bottom electrode via;
- patterning a MTJ cell by an ion beam etch;
- and
- forming a first (N+M)th metal layer over the MTJ cell,
- wherein N is an integer greater than or equal to 1, and M is an integer greater than or equal to 1.
A method for manufacturing a semiconductor structure, the method comprising:
- forming a first Nth metal line in a memory region and a second Nth metal line in a logic region;
- forming a carbon-based layer over the first Nth metal line and the second Nth metal line;
- forming a bottom electrode via in the carbon-based layer;
- forming a magnetic tunneling junction (MTJ) multilayer over the bottom electrode via;
- patterning a MTJ cell by an ion beam etch;
- and
- forming a first (N+M)th metal layer directly on the MTJ,
- wherein N is an integer greater than or equal to 1, and M is an integer greater than or equal to 1.
Dependencies are inferred from the claim text.