Optoelectronic device comprising pixels with improved contrast and brightness

A method of manufacturing an optoelectronic device, comprising the steps of:

• a) forming, in a substrate including first and second opposite surfaces, lateral electrical insulation elements extending from the first surface to the second surface and delimiting in the substrate first semiconductor or conductive portions electrically insulated from one another;
• b) forming, for each first portion, an assembly of light-emitting diodes resting on the first surface and electrically coupled to the first portion;
• c) forming, for each first portion, a conductive electrode layer at least partially transparent at least in the emission wavelength range of the light-emitting diodes covering all the light-emitting diodes;
• d) forming a protection layer of a first dielectric material at least partially transparent at least in the emission wavelength range of the light-emitting diodes and of possible phosphors present in the protection layer covering the electrode layer and walls at least partly extending in the protection layer and delimiting in the protection layer second portions surrounding or opposite the assemblies of light-emitting diodes, the walls containing at least one second material different from the first material and comprised in the group comprising air, a metal, a metal alloy, a material partially transparent at least in the emission wavelength of the light-emitting diodes and of the possible phosphors, and a core made of a material at least partially transparent at least in the emission wavelength range of the light-emitting diodes and of the possible phosphors covered with a layer which is opaque or reflective at least in the emission wavelength range of the light-emitting diodes and of the possible phosphors.