Photoelectric conversion device, method of manufacturing the same, and equipment

A photoelectric conversion device that includes a photoelectric converter arranged in a semiconductor substrate and a transistor arranged on a surface of the semiconductor substrate, wherein

• the photoelectric converter includes a first region which is of a first conductivity type and is configured to accumulate charges and a second region of a second conductivity type different from the first conductivity type, and the first region is arranged between the surface and the second region,
• the semiconductor substrate includes a third region which functions as a source and/or a drain of the transistor,
• the semiconductor substrate includes, in a position which is below the third region and is apart from the third region, an impurity region containing carbon, and
• a depth from the surface, of a peak position of the density of the carbon in the impurity region falls within a range of 0.1 μm to 0.5 μm and is smaller than a depth from the peak position, of the peak position of the density of a majority carrier in the second region.

A method of manufacturing a photoelectric conversion device that includes a photoelectric converter and a transistor,

• the photoelectric converter includes a first region which is of a first conductivity type and is configured to accumulate charges and a second region of a second conductivity type different from the first conductivity type, and the first region is arranged between a surface of a semiconductor substrate and the second region,
• the method comprising:
• implanting a group 14 element other than silicon to the semiconductor substrate and forming an impurity region containing the group 14 element in the semiconductor substrate;
• and
• forming a third region configured to function as a source or a drain of the transistor in the semiconductor substrate,
• wherein the impurity region is arranged in a position which is below the third region and is apart from the third region, and
• a depth from the surface, of a peak position of the density of the group 14 element in the impurity region is smaller than a depth from the surface, of the peak position of the density of a majority carrier in the second region.