Gallium nitride photodetector with substantially transparent electrodes
OwnerJames G. Fiorenza, Shrenik Deliwalainventors
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Abstract
A photodetector having a substrate, a layer gallium nitride based material supported by the substrate, and a pair of electrodes formed by a two-dimensional electron gas at an interface between the layer gallium nitride based material and a barrier layer, the pair of electrodes being substantially transparent to ultraviolet
Claims19
A photodetector comprising:
- a substrate;
- a layer gallium nitride based material supported by the substrate;
- and
- a pair of electrodes formed by a two-dimensional electron gas at an interface between the layer gallium nitride based material and a barrier layer, the pair of electrodes being substantially transparent to ultraviolet light.
The photodetector of claim I, wherein pair of electrodes are formed by patterning at least one of the layer gallium nitride based material and the buffer layer to inhibit formation of the two-dimensional electron gas outside of the pair of electrodes.
A light detector for detecting ultraviolet light, the detector comprising:
- an aluminum indium gallium nitride layer configured to receive ultraviolet light and to provide at least one charge carrier in response to the received ultraviolet light;
- and
- a two-dimensional electron gas at an interface of the Aluminum Indium to Gallium Nitride layer and a layer adjacent to the Aluminum Indium Gallium Nitride layer, the electron gas including a first region and a second region electrically isolated from the first region, wherein the first region and the second region attract the at least one charge carrier.
A method of operating a gallium nitride based photodetector, the method comprising:
- applying a first voltage to a first two-dimensional electron gas electrode of the gallium nitride based photodetector;
- applying a second voltage to a second two dimensional electrode gas electrode of the gallium nitride based photodetector;
- and
- actuating a circuit using a current flowing between the first two-dimensional electron gas electrode and the second two-dimensional electron gas electrode in response to light impacting a photoreceptive surface of the gallium nitride based photodetector.
Dependencies are inferred from the claim text.