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US 2019/0165027 A1Published application
Semiconductor apparatus and equipment
AssigneeCanon Kabushiki Kaisha
InventorsHideaki Ishino, Takumi Ogino
Life of this patent
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Abstract
A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.
Claims20
A semiconductor apparatus comprising:
- first and second semiconductor layers stacked to each other;
- a first structure disposed between the first and second semiconductor layers;
- and
- a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,
- wherein the second semiconductor layer includes an opening, and
- wherein in a joint surface between the first and second structures, a portion between the first semiconductor layer and the opening in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion surrounding each of the first and second conductor portions to include a portion located between the first and second conductor portions.
3 more elements
A semiconductor apparatus comprising:
- first and second semiconductor layers stacked to each other;
- a first structure disposed between the first and second semiconductor layers;
- and
- a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,
- wherein the second semiconductor layer includes an opening, and
- wherein in one of the first and second structures, a portion between the first semiconductor layer and a first portion in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion surrounding each of the first and second conductor portions to include a portion located between the first and second conductor portions, and the insulator portion is in contact with an insulator member included in the other of the first and second structures.
3 more elements
A semiconductor apparatus comprising:
- first and second semiconductor layers stacked to each other;
- a first structure disposed between the first and second semiconductor layers;
- and
- a second structure disposed between the first structure and the second semiconductor layer, the first and second structures being bonded to each other,
- wherein the second semiconductor layer includes an opening,
- wherein in a joint surface between the first and second structures, a portion between the first semiconductor layer and the opening in a first direction in which the first and second semiconductor layers are stacked together includes first and second conductor portions lined up in a second direction orthogonal to the first direction, and an insulator portion located between the first and second conductor portions,
- wherein the semiconductor apparatus further comprises an electrode provided between the insulator portion and the opening in the first direction,
- wherein the second structure includes an insulator member disposed side by side with the electrode in the second direction, and a trench is provided between the electrode and the insulator member, and
- wherein a distance between the trench and the first semiconductor layer is smaller than a distance between the electrode and the second semiconductor layer.
6 more elements
Dependencies are inferred from the claim text.