Semiconductor image sensor and method for forming the same

A semiconductor image sensor comprising:

• a first light sensing layer comprising a plurality of first sensing devices;
• a second light sensing layer comprising a plurality of second sensing devices;
• a first interconnect structure sandwiched between the first light sensing layer and the second light sensing layer;
• a second interconnect structure;
• a first logic device between the first light sensing layer and the first interconnect structure;
• a second logic device between the second light sensing layer and the second interconnect structure;
• at least one bonded structure disposed between the first interconnect structure and the second sensing layer;
• and
• at least one conductor penetrating the second light sensing layer,
• wherein the second light sensing layer is between the first logic device and the second logic device, and the conductor is electrically connected to the bonded structure.

A semiconductor image sensor comprising:

• a first light sensing layer comprising a plurality of first sensing devices;
• a second light sensing layer comprising a plurality of second sensing devices;
• a first interconnect structure sandwiched between the first light sensing layer and the second light sensing layer;
• a second interconnect structure;
• a first logic device between the first light sensing layer and the first interconnect structure;
• a second logic device between the second light sensing layer and the second interconnect structure;
• and
• a plurality of dielectric grating patterns sandwiched between the first interconnect structure and the second light sensing layer,
• wherein the second light sensing layer is between the first logic device and the second logic device, and the plurality of dielectric grating patterns overlap the plurality of second sensing devices.