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US 2019/0165018 A1Published application
Image sensor and method of fabricating the same
AssigneeSK hynix Inc.
InventorsSung-Kun Park, Hye-Won Mun
Life of this patent
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Abstract
An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
Claims29
An image sensor comprising:
- a first transfer gate formed over a substrate, and including a first projection;
- a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection;
- and
- a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate,
- wherein the first projection and the second projection face each other.
2 more elements
An image sensor comprising:
- a first transfer gate formed over a substrate, and including a first projection and a third projection;
- a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection and a fourth projection;
- and
- a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate,
- wherein the first projection and the second projection overlap with the floating diffusion.
2 more elements
An image sensor comprising:
- a floating diffusion formed in a substrate;
- a first transfer gate and a second transfer gate formed over the substrate to partially overlap with the floating diffusion;
- and
- a first dummy structure formed over the substrate to overlap with the floating diffusion, and positioned between the first transfer gate and the second transfer gate.
1 more element
Dependencies are inferred from the claim text.