Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHIA-YU WEI, CHIN-HSUN HSIAO, YI-HSING CHU, YEN-LIANG LIN, YUNG-LUNG HSU, HSIN-CHI CHEN
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Abstract
A semiconductor structure includes a semiconductive substrate including a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, and an ILD disposed over the first side of the semiconductive substrate, and a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure. A top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductor substrate.
Claims20
A semiconductor structure, comprising:
- a semiconductive substrate including a first side and a second side opposite to the first side;
- a radiation sensing device disposed in the semiconductive substrate;
- an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate;
- and
- a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure,
- wherein a top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductive substrate.
A semiconductor structure, comprising:
- a semiconductive substrate including a first side and a second side opposite to the first side;
- a radiation sensing device disposed in the semiconductive substrate;
- an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate;
- and
- a conductive pad disposed in the semiconductive substrate and the ILD,
- wherein the conductive pad is in contact with the ILD and is separated from the semiconductive substrate.
A semiconductor structure, comprising:
- a semiconductive substrate including a first side and a second side opposite to the first side;
- a radiation sensing device disposed in the semiconductive substrate;
- an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate;
- and
- a conductive pad disposed in the semiconductive substrate and the ILD,
- wherein a portion of the ILD is disposed within the conductive pad.
Dependencies are inferred from the claim text.