Array substrate, display panel, display apparatus, and method for manufacturing array substrate

A display panel, comprising an array substrate and a display function layer, wherein the array substrate comprises a base-substrate and a plurality of circuit structures disposed on a side of the base-substrate;

• wherein the plurality of circuit structures comprises a pixel driving circuit located in a display region and a peripheral driving circuit surrounding the display region;
• the plurality of circuit structures comprises a plurality of thin film transistors comprising a first type of thin film transistor and a second type of thin film transistor, and each of the plurality of thin film transistors comprises a gate electrode, a gate insulation layer, an active layer of an oxide semiconductor comprising at least one sub-layer, and a source-drain electrode stacked in a direction perpendicular to the base-substrate;
• the active layer of the first type of thin film transistor has more sub-layers than that of the active layer of the second type of thin film transistor, a total thickness of the active layer of the first type of thin film transistor is larger than a total thickness of the active layer of the second type of thin film transistor, and each sub-layer of the active layer of the second type of thin film transistor is in a same layer as the active layer of the first type of thin film transistor;
• the first type of thin film transistor is electrically connected into the pixel driving circuit, and is configured to output a driving signal for controlling brightness of a display device;
• and
• the second type of thin film transistor is electrically connected into the peripheral driving circuit, and is configured to output a scanning signal,
• the display function layer is disposed on a side of the array substrate away from the base-substrate.

A display apparatus, comprising a display panel, wherein the display panel comprises an array substrate and a display function layer, wherein the array substrate comprises base-substrate and a plurality of circuit structures disposed on a side of the base-substrate;

• wherein the plurality of circuit structures comprises a pixel driving circuit located in a display region and a peripheral driving circuit surrounding the display region;
• the plurality of circuit structures comprises a plurality of thin film transistors comprising a first type of thin film transistor and a second type of thin film transistor, and each of the plurality of thin film transistors comprises a gate electrode, a gate insulation layer, an active layer of an oxide semiconductor comprising at least one sub-layer, and a source-drain electrode stacked in a direction perpendicular to the base-substrate;
• the active layer of the first type of thin film transistor has more sub-layers than that of the active layer of the second type of thin film transistor, a total thickness of the active layer of the first type of thin film transistor is larger than a total thickness of the active layer of the second type of thin film transistor, and each sub-layer of the active layer of the second type of thin film transistor is in a same layer as the active layer of the first type of thin film transistor;
• the first type of thin film transistor is electrically connected into the pixel driving circuit, and is configured to output a driving signal for controlling brightness of a display device;
• and
• the second type of thin film transistor is electrically connected into the peripheral driving circuit, and is configured to output a scanning signal,
• the display function layer is disposed on a side of the array substrate away from the base-substrate.

A method for manufacturing an array substrate, comprising:

• forming, on a side of a base-substrate, a gate electrode, a gate insulation layer, an active layer of an oxide semiconductor and a source-drain electrode for a first type of thin film transistor and a second type of thin film transistor, respectively;
• wherein forming the active layer of the first type of thin film transistor and the second type of thin film transistor further comprises:
• forming a first active layer on the side of the base-substrate, and patterning the first active layer to form a part of the active layer of the first type of thin film transistor;
• and
• forming a second active layer on a side of the first active layer away from the base-substrate, and patterning the second active layer to form the active layer of the second type of thin film transistor and another part of the active layer of the first type of thin film transistor.