US 2019/0165002 A1 · OXIDE THIN FILM TRANSISTOR, FABRICATING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE

Abstract

The present disclosure provides an oxide TFT, a fabricating method therefor, an array substrate and a display device. The method for fabricating an oxide TFT includes: providing a substrate; successively forming a light shielding layer, a first insulating layer and a semiconductor layer on the substrate; successively forming a second insulating layer, a gate, and a third insulating layer on the semiconductor layer, wherein an orthographic projection of the second insulating layer on the substrate covers an orthographic projection of the semiconductor on the substrate; removing the second insulating layer and the third layer covering regions to be conducted of the semiconductor layer; processing the regions to be conducted by a conducting process to form conducted regions; and forming a first electrode and a second electrode on the conducted regions.

Claims20

Dependent claims

A method for fabricating an oxide thin film transistor, comprising:

providing a substrate;
successively forming a light shielding layer, a first insulating layer and a semiconductor layer on the substrate;
successively forming a second insulating layer, a gate, and a third insulating layer on the semiconductor layer, wherein an orthographic projection of the second insulating layer on the substrate covers an orthographic projection of the semiconductor on the substrate;
removing the second insulating layer and the third layer covering regions to be conducted of the semiconductor layer;
processing the regions to be conducted using a conducting process to form conducted regions;
and
forming a first electrode and a second electrode on the conducted regions.

4 more elements

An oxide thin film transistor comprising:

a substrate,
a light shielding layer formed on a side of the substrate,
a first insulating layer formed on a side of the light shielding layer facing away from the substrate to cover the light shielding layer,
a semiconductor layer formed on a side of the first insulating layer facing away from the substrate and comprising conducted regions at opposing ends,
a second insulating layer formed on a side of the semiconductor layer facing away from the substrate to cover part of the semiconductor layer between the conducted regions,
a gate formed on a side of the second insulating layer facing away from the substrate,
a third insulating layer formed on a side of the first insulating layer facing away from the substrate to cover the gate, and
a first and a second electrodes formed on a side of the third insulating layer facing away from the substrate and connected with the conducted regions of the semiconductor layer through via holes, respectively.

5 more elements

Dependencies are inferred from the claim text.

Oxide thin film transistor, fabricating method therefor, array substrate, and display device

Life of this patent

Oxide thin film transistor, fabricating method therefor, array substrate, and display device

Life of this patent

Abstract

Claims20