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US 2019/0164993 A1Published application
Semiconductor integrated circuit device
AssigneeSocionext Inc.
InventorHiroyuki SHIMBO
Life of this patent
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Abstract
Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. A standard cell having no logical function is disposed adjacent to a standard cell having a logical function. The standard cell includes nanowire FETs having nanowires and pads. The standard cell further includes dummy pads, which have no contribution to a logical function of a circuit.
Claims12
A semiconductor integrated circuit device, comprising:
- a first standard cell including a nanowire field effect transistor (FET) and having a logical function;
- and
- a second standard cell disposed adjacent to the first standard cell in a first direction and having no logical function,
- wherein
- the nanowire FET includes:
- a nanowire extending in the first direction, the nanowire being a single nanowire or including a plurality of parallelly arranged nanowires;
- and
- a pair of pads that are respectively arranged at both ends of the nanowire in the first direction, each have a lower surface below a lower surface of the nanowire, and are each connected to the nanowire, and
- the second standard cell includes a dummy pad having no contribution to a logical function of a circuit.
6 more elements
Dependencies are inferred from the claim text.