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US 2019/0164988 A1Published application
Semiconductor device including different orientations of memory cell array and peripheral circuit transistors
AssigneeSamsung Electronics Co., Ltd.
InventorsSUNG-HUN LEE, JONG-HO PARK, JOON-HEE LEE, HEE-JUENG LEE
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Abstract
A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.
Claims20
A semiconductor device comprising:
- a plurality of memory cells on a first region of a substrate;
- a peripheral circuit on a second region of the substrate;
- and
- a dummy active region on a dummy region between the first region and the second region of the substrate.
1 more element
A semiconductor device comprising:
- a first region of a semiconductor substrate;
- a second region of the semiconductor substrate;
- and
- a dummy region between the first and second regions of the semiconductor substrate, wherein the dummy region includes a plurality of dummy active regions extending in a direction.
1 more element
A semiconductor device comprising:
- a cell region of a semiconductor substrate;
- and
- a dummy region adjacent to the cell region of the semiconductor substrate, wherein the dummy region includes a dummy active region not comprising transistors therein.
Dependencies are inferred from the claim text.