US 2019/0164986 A1Published application

Semiconductor device and a manufacturing method thereof

AssigneeRenesas Electronics Corporation

InventorShibun TSUDA

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Abstract

The performances of a semiconductor device are improved. A plurality of first gate patterns are formed over a fin of a part of a semiconductor substrate. A gate insulation film including a metal oxide film is formed between the adjacent first gate patterns. Then, a memory gate electrode is formed over the gate insulation film to fill between the adjacent first gate patterns. Then, the first gate patterns are selectively removed, to form a second gate pattern at the side surface of the memory gate electrode via the gate insulation film. Then, ions are implanted into the fin exposed from the memory gate electrode and the second gate pattern, to form an extension region in the fin. During formation of the extension region, the gate insulation film is not formed at the side surface of the fin, and hence ion implantation is not inhibited.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, comprising the steps of:

(a) retreating a part of the upper surface of a semiconductor substrate, and forming a projecting part which is the part of the semiconductor substrate and which projects from the retreated upper surface of the semiconductor substrate and extends in a first direction along the main surface of the semiconductor substrate;
(b) forming a first conductive film in such a manner as to cover the upper surface and the side surface of the projecting part;
(c) patterning the first conductive film, and thereby forming a plurality of first gate patterns extending in a second direction orthogonal to the first direction;
(d) forming a first gate insulation film including a metal oxide film over the upper surfaces and the side surfaces of the first gate patterns, and over the upper surface and over the side surface of the projecting part between the mutually adjacent first gate patterns;
(e) forming a memory gate electrode extending in the second direction over the first gate insulation film in such a manner as to fill between the adjacent first gate patterns;
(f) after the step (e), removing the first gate insulation film formed over the upper surfaces of the first gate patterns;
(g) after the step (f), removing a part of the first gate patterns, and thereby forming a second gate pattern extending in the second direction, and formed of the remaining first gate pattern at the side surface of the memory gate electrode in the first direction via the first gate insulation film;
and
(h) ion implanting the projecting part exposed from the memory gate electrode and the second gate pattern, and thereby forming an impurity region in the projecting part.

6 more elements

A semiconductor device, comprising:

a memory gate electrode and a control gate electrode formed over a semiconductor substrate;
a first gate insulation film formed in such a manner as to surround the side surface and the bottom surface of the memory gate electrode;
and
a second gate insulation film formed in such a manner as to surround the side surface and the bottom surface of the control gate electrode,
wherein in a plan view, the memory gate electrode and the control gate electrode are adjacent via the first gate insulation film and the second gate insulation film in a first direction, and extend in a second direction orthogonal to the first direction, respectively,
wherein in a plan view, the first gate insulation film is formed over the side surface of the memory gate electrode along the first direction and the second direction, and
wherein the second gate insulation film is formed over the side surface of the control gate electrode along the first direction and the second direction.

4 more elements

Dependencies are inferred from the claim text.