Back to results
US 2019/0164979 A1Published application
Semiconductor memory
AssigneeToshiba Memory Corporation
InventorsTomoo HISHIDA, Sadatoshi MURAKAMI, Ryota KATSUMATA, Masao IWASE
Life of this patent
Estimating the term…
Abstract
A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate.
Claims16
A memory comprising:
- a substrate;
- a first memory cell array above the substrate;
- a second memory cell array above the substrate;
- a first dummy memory cell array above the substrate, wherein the first dummy memory cell array is between the first memory cell array and the second memory cell array;
- a first wire electrically connected to the first dummy memory cell array, wherein a first part of the first wire is located between the first memory cell array and the second memory cell array;
- and
- a second wire electrically connected to a memory cell of the first memory cell array and to a memory cell of the second memory cell array, wherein a part of the second wire is above the first memory cell array, the second memory cell array, and the first part of the first wire.
4 more elements
Dependencies are inferred from the claim text.