US 2019/0164978 A1 · SRAM STRUCTURE

Abstract

An SRAM structure is provided. The SRAM structure includes a plurality of first well regions with a first doping type, a plurality of second well regions with a second doping type, a third well region with the second doping type, a plurality of first well pick-up regions, a plurality of second well pick-up regions, and a plurality of memory cells. The first well regions, the second well regions, and the third well region are formed in a semiconductor substrate. The third well region is adjacent to the second well regions. The first well pick-up regions are formed in the first well regions. The second well pick-up regions are formed in the third well region. The second well pick-up regions are shared by the third well region and the second well regions. The memory cells are formed on the first and second well regions.

Claims20

Dependent claims

An SRAM structure, comprising:

a plurality of first well regions with a first doping type formed in a semiconductor substrate;
a plurality of second well regions with a second doping type formed in the semiconductor substrate, wherein the first and second well regions are interlaced;
a third well region with the second doping type formed in the semiconductor substrate, wherein the third well region is adjacent to the second well regions;
a plurality of first well pick-up regions formed in the first well regions;
a plurality of second well pick-up regions formed in the third well region, wherein the second well pick-up regions are shared by the third well region and the second well regions;
and
a plurality of memory cells on the first and second well regions.

4 more elements

Dependencies are inferred from the claim text.

Sram structure

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Sram structure

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Abstract

Claims20