Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHui-jung Kim, Bong-soo Kim, Sung-hee Han, Yoo-sang Hwang
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Abstract
A semiconductor memory device according to an example embodiment of the present inventive concept may include: a plurality of lower electrodes located on a substrate and spaced apart from one another; and an etch stop pattern located on the substrate and surrounding at least a part of each of the plurality of lower electrodes, in which the etch stop pattern includes: a first etch stop pattern including carbon; and a second etch stop pattern located on the first etch stop pattern and including a material different from a material of the first etch stop pattern.
Claims20
A semiconductor memory device comprising:
- a plurality of lower electrodes located on a substrate and spaced apart from one another;
- and
- an etch stop pattern located on the substrate and surrounding at least a part of each of the plurality of lower electrodes,
- wherein the etch stop pattern comprises:
- a first etch stop pattern comprising carbon;
- a second etch stop pattern located on the first etch stop pattern and comprising a material different from a material of the first etch stop pattern;
- and
- both the first etch stop pattern and the second etch stop pattern comprising silicon.
A semiconductor memory device comprising:
- a plurality of lower electrodes located on a substrate and spaced apart from one another;
- a first etch stop pattern located on the substrate and surrounding a lower portion of a sidewall of each of the plurality of lower electrodes;
- and
- a second etch stop pattern located on the first etch stop pattern,
- wherein a horizontal cross-sectional area of the second etch stop pattern decreases and then increases as the horizontal cross-sectional area of the second etch stop pattern goes away from the substrate in a vertical direction.
(canceled)
A semiconductor memory device comprising:
- a plurality of lower electrodes located on a substrate, spaced apart from one another and having a hollow column shape;
- a first etch stop pattern located on the substrate and surrounding a lower portion of each of the plurality of lower electrodes;
- and
- a second etch stop pattern located on the first etch stop pattern,
- wherein each of the plurality of lower electrodes comprises:
- a first portion arranged at a first level and defining a first inner space;
- a second portion arranged at a second level higher than the first level and defining a second inner space;
- and
- a third portion arranged at a third level higher than the second level and defining a third inner space,
- wherein a horizontal width of the second inner space is greater than a horizontal width of the third inner space.
Dependencies are inferred from the claim text.