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US 2019/0164971 A1Published application
Semiconductor device and fabrication thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
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Abstract
A semiconductor device includes a first fin, a second fin, an isolation gate and a dielectric dummy gate. The first and second fins extend in a first direction. The isolation gate extends in a second direction and crosses the first fin. The isolation gate includes a conductive material. The dielectric dummy gate extends from one end of the isolation gate in the second direction and overlaps with the second fin.
Claims20
A semiconductor device, comprising:
- a first fin extending in a first direction;
- a second fin extending in the first direction;
- an isolation gate extending in a second direction and crossing the first fin, wherein the isolation gate comprises a conductive material;
- and
- a dielectric dummy gate extending from one end of the isolation gate in the second direction and overlapping with the second fin.
2 more elements
A semiconductor device, comprising:
- a first fin extending in a first direction;
- a second fin extending in the first direction and substantially aligned with the first fin;
- a dielectric dummy gate extending in a second direction and interposed between the first fin and the second fin;
- a third fin extending in the first direction;
- and
- an isolation gate extending in the second direction and crossing the third fin, wherein the isolation gate is substantially aligned with the dielectric dummy gate.
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A method of manufacturing a semiconductor device, the method comprising:
- forming a first fin over an N-type well region and a second fin over a P-type well region;
- forming a gate across the first fin and the second fin;
- etching a first portion of the gate to expose a portion of the second fin, wherein a second portion of the gate remains across the first fin;
- etching the exposed portion of the second fin to break the second fin into a plurality of third fins;
- and
- filling a space between the third fins with a dielectric material.
3 more elements
Dependencies are inferred from the claim text.