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US 2019/0164970 A1Published application
Semiconductor component and fabricating method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng CHING, Ching-Wei TSAI, Kuan-Lun CHENG, Chih-Hao WANG
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Abstract
A FinFET device includes a fin, an epitaxial layer disposed at a side surface of the fin, a contact disposed on the epitaxial layer and on the fin. The contact includes an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion. The doping concentration of the epitaxial contact portion is higher than a doping concentration of the epitaxial layer.
Claims20
A semiconductor component comprising:
- an n-type device comprising:
- a first fin disposed on a substrate;
- a first epitaxial layer disposed on a sidewall of the first fin;
- and
- a first contact disposed over the first fin and the first epitaxial layer, the first contact comprising an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion, wherein the first epitaxial layer and the epitaxial contact portion have an interface there-between.
2 more elements
A FinFET device comprising:
- a fin;
- an epitaxial layer disposed on a sidewall of the fin;
- and
- a contact disposed on the epitaxial layer and on the fin, the contact comprising an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion, wherein a doping concentration of the epitaxial contact portion is higher than a doping concentration of the epitaxial layer.
1 more element
A method of fabricating a semiconductor component, the method comprising:
- forming a first epitaxial layer cladding a first fin;
- forming a second epitaxial layer cladding a second fin;
- removing portions of the first epitaxial layer, the first fin, the second epitaxial layer, and the second fin;
- forming a germanium-containing oxide layer on the second fin and on the second epitaxial layer;
- and
- forming an epitaxial contact portion on the first fin and the first epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.