US 2019/0164968 A1 · DIFFERENTIATED VOLTAGE THRESHOLD METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Claims25

Dependent claims

An integrated circuit structure, comprising:

a fin comprising silicon, the fin having a top and sidewalls;
a gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin;
an N-type gate electrode over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer;
a first N-type source or drain region adjacent a first side of the gate electrode;
and
a second N-type source or drain region adjacent a second side of the gate electrode, the second side opposite the first side.

3 more elements

Dependencies are inferred from the claim text.

Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication

Life of this patent

Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication

Life of this patent

Abstract

Claims25