Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
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Abstract
A semiconductor device includes a first circuit and a second circuit. The first circuit includes a first gate, a first drain, and a first source. The second circuit includes a second gate, a second drain, and a second source. The first drain and the first source of the first circuit include a first doping material with a first concentration. A gate pitch and a gate critical dimension of the first gate of the first circuit are the same as a gate pitch and a gate critical dimension of the second gate of the second circuit. The second drain and the second source of the second circuit include a second doping material with a second concentration, wherein the first concentration is different from the second concentration.
Claims20
A semiconductor device, comprising:
- a first circuit, comprising:
- a first gate,
- a first drain, comprising a first doping material with a first concentration;
- and
- a first source, comprising the first doping material with the first concentration;
- and
- a second circuit, comprising:
- a second gate, wherein a gate pitch and a gate critical dimension of the first gate are the same as a gate pitch and a gate critical dimension of the second gate;
- a second drain, comprising a second doping material with a second concentration;
- and
- a second source, comprising the second doping material with the second concentration, wherein the first concentration is different from the second concentration.
A semiconductor device, comprising:
- a substrate;
- a well, forming on the substrate;
- a first transistor formed in the well, comprising:
- a first gate region;
- a first heavy doped drain region;
- and
- a first heavy doped source region, wherein a doping concentration of the first heavy doped drain region and the first heavy doped source region is a first concentration;
- and
- a second transistor formed in the well and disposed adjacent to the first transistor, comprising:
- a second gate region, wherein a gate pitch and a gate critical dimension of the second gate region are the same as a gate pitch and a gate critical dimension of the first gate region;
- a second doped drain region;
- and
- a second doped source region, wherein a doping concentration of the second doped drain region and the second doped source region is a second concentration, wherein a difference between the first concentration and the second concentration is about 30-50%.
A method, comprising:
- forming a well on a substrate;
- forming a first transistor in the well, comprising:
- forming a first gate region;
- forming a first heavy doped drain region;
- and
- forming a first heavy doped source region, wherein a doping concentration of the first heavy doped drain region and the first heavy doped source region is a first concentration;
- forming a second transistor in the well and disposing the second transistor adjacent to the first transistor, comprising:
- forming a second gate region, wherein a gate pitch and a gate critical dimension of the second gate region are the same as a gate pitch and a gate critical dimension of the first gate region;
- forming a second doped drain region;
- and
- forming a second doped source region, wherein a doping concentration of the second doped drain region and the second doped source region is a second concentration, wherein a difference between the first concentration and the second concentration is about 30-50%.
Dependencies are inferred from the claim text.