Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Li WANG, Pang-Yen TSAI, Yasutoshi OKUNO
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Abstract
A semiconductor device includes first and second epitaxial structures, first and second top metal alloy layers, and first and second bottom metal alloy layers. The first and second epitaxial structures have different cross sections. The first and second top metal alloy layers are respectively in contact with the first and second epitaxial structures. The first and second bottom metal alloy layers are respectively in contact with the first and second epitaxial structures and respectively under the first and second top metal alloy layers. The first top metal alloy layer and the first bottom metal alloy layer are made of different materials.
Claims20
A semiconductor device comprising:
- first and second epitaxial structures, wherein the first and second epitaxial structures have different cross sections;
- first and second top metal alloy layers respectively in contact with the first and second epitaxial structures;
- and
- first and second bottom metal alloy layers respectively in contact with the first and second epitaxial structures and respectively under the first and second top metal alloy layers, wherein the first top metal alloy layer and the first bottom metal alloy layer are made of different materials.
A semiconductor device comprising:
- a first epitaxial structure having an upward facing facet facing upwards and a downward facing facet facing downwards;
- a second epitaxial structure having an upward facing facet facing upwards and a downward facing facet facing downwards, wherein the first epitaxial structure and the second epitaxial structure have different conductivity types;
- first and second top metal alloy layers respectively in contact with the upward facing facet of the first epitaxial structure and the upward facing facet of the second epitaxial structure;
- and
- first and second bottom metal alloy layers respectively in contact with the downward facing facet of the first epitaxial structure and the downward facing facet of the second epitaxial structure, wherein the first top metal alloy layer and the first bottom metal alloy layer have different work functions.
A method for manufacturing a semiconductor device comprising:
- forming first and second epitaxial structures over a substrate, wherein the first and second epitaxial structures have different conductivity types, and the first and second epitaxial structures each has an upward facing facet facing upwards and a downward facing facet facing downwards;
- forming first and second metal layers respectively on the upward facing facets of the first and second epitaxial structures;
- annealing the first and second metal layers and the first and second epitaxy structures to form a first top metal alloy layer on the upward facing facet of the first epitaxial structure and a second top metal alloy layer on the upward facing facet of the second epitaxial structure;
- forming a third metal layer at least on the downward facing facets of the first and second epitaxial structures, wherein the first and third metal layers have different metals;
- and
- annealing the third metal layer and the first and second epitaxial structures to form a first bottom metal alloy layer on the downward facing facet of the first epitaxial structure and a second bottom metal alloy layer on the downward facing facet of the second epitaxial structure.
Dependencies are inferred from the claim text.