US 2019/0164963 A1 · METHOD FOR MANUFACTURING A FINFET DEVICE

Abstract

A method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device, at first, a semiconductor substrate of a wafer is etched to form at least one fin. Then, an insulation structure is formed around the fin. Thereafter, the fin is recessed. Then, an epitaxial channel structure is epitaxially grown over the recessed fin. Thereafter, a portion of the epitaxial channel structure over a top surface of the insulation structure is removed. Then, a non-contact-type cleaning operation is performed to clean a top surface of the wafer after removing said portion of the epitaxial channel structure. Thereafter, the top surface of the wafer is cleaned using hydrogen fluoride after removing said portion of the epitaxial channel structure. Then, the insulation structure is recessed, such that the epitaxial channel structure protrudes from the recessed insulation structure.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, the method comprising:

etching a semiconductor substrate of a wafer to form at least one fin;
forming an insulation structure around the fin;
recessing the fin;
epitaxially growing an epitaxial channel structure over the recessed fin;
removing a portion of the epitaxial channel structure over a top surface of the insulation structure;
performing a non-contact-type cleaning operation to clean a top surface of the wafer after removing said portion of the epitaxial channel structure;
cleaning the top surface of the wafer using hydrogen fluoride after removing said portion of the epitaxial channel structure;
and
recessing the insulation structure such that the epitaxial channel structure protrudes from the recessed insulation structure.

6 more elements

Dependencies are inferred from the claim text.

Method for manufacturing a finfet device

Life of this patent

Method for manufacturing a finfet device

Life of this patent

Abstract

Claims20