Integrated circuit device with high mobility and system of forming the integrated circuit

An integrated circuit device, comprising:

• a first fin structure, having a first type dopant, disposed on a substrate and aligned in a first direction;
• a second fin structure, having the first type dopant, disposed on the substrate and aligned in the first direction, wherein the second fin structure is successively adjacent to the first fin structure;
• a third fin structure, having the first type dopant, disposed on the substrate and aligned in the first direction, wherein the third fin structure is successively adjacent to the second fin structure;
• and
• a first conductive line, aligned in a second direction, arranged to wrap a first portion, a second portion, and a third portion of the first fin structure, the second fin structure, and the third fin structure respectively;
• wherein a first distance between the first fin structure and the second fin structure is different from a second distance between the second fin structure and the third fin structure.

A system of forming an integrated circuit device, the system comprising:

• at least one processor, configured to execute program instructions which configure the at least one processor as a processing tool that performs operations comprising:
• forming a first fin structure having a first type dopant on a substrate and aligned in a first direction;
• forming a second fin structure having the first type dopant on the substrate and aligned in the first direction, wherein the second fin structure is successively adjacent to the first fin structure;
• forming a third fin structure having a second type dopant on the substrate in the first direction;
• forming a fourth fin structure having the second type dopant on the substrate and aligned in the first direction, wherein the fourth fin structure is successively adjacent to the third fin structure;
• and
• arranging a first conductive line, aligned in a second direction, to wrap a first portion, a second portion, a third portion, and a fourth portion of the first fin structure, the second fin structure, the third fin structure, and the fourth fin structure respectively;
• wherein a first distance between the first fin structure and the second fin structure is different from a second distance between the third fin structure and the fourth fin structure.