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US 2019/0164956 A1Published application
Ultrasonic transducers in complementary metal oxide semiconductor (cmos) wafers and related apparatus and methods
AssigneeButterfly Network, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Susan A. Alie
Life of this patent
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Abstract
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
Claims20
An ultrasound device, comprising:
- a complementary metal oxide semiconductor (CMOS) wafer comprising:
- an integrated circuit having a transistor gate layer;
- a plurality of metallization layers disposed above the transistor gate layer;
- and
- an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising:
- a bottom electrode formed above a first of the plurality of metallization layers;
- a cavity disposed above the bottom electrode;
- and
- a top electrode disposed above the cavity and formed below a second of the plurality of metallization layers;
- wherein the bottom electrode comprises a first plurality of vias disposed between the first of the plurality of metallization layers and the cavity, and the top electrode comprises a second plurality of vias disposed between the cavity and the second of the plurality of metallization layers.
7 more elements
The ultrasound device of claim 20, wherein the sealed access holes are formed around a perimeter of the cavity and the plurality of metallization layers run between the sealed access holes.
Dependencies are inferred from the claim text.