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US 2019/0164950 A1Published application
Semiconductor integrated circuit device
AssigneeSocionext Inc.
InventorHiroyuki SHIMBO
Life of this patent
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Abstract
Disclosed herein is a semiconductor integrated circuit device which includes a standard cell with a plurality of fins extending in a first direction and arranged in a second direction that is perpendicular to the first direction. An active fin of the fins forms part of an active transistor. A dummy fin of the fins is disposed between the active fin and an end of the standard cell.
Claims20
A semiconductor integrated circuit device comprising:
- a first cell row comprising a first standard cell and a second standard cell arranged in a first direction;
- and
- a second cell row comprising a third standard cell and a fourth standard cell arranged in the first direction, and disposed adjacent to the first cell row in a second direction perpendicular to the first direction, wherein
- the first standard cell comprises a first active transistor with a fin structure having a first fin extending in the first direction and disposed closest to a cell row boundary between the first and second cell rows,
- the second standard cell comprises a dummy fin extending in the first direction and disposed at the same position in the second direction as the first fin,
- the third standard cell comprises a second fin extending in the first direction, and
- the fourth standard cell comprises a third fin extending in the first direction and disposed at the same position in the second direction as the second fin.
4 more elements
A semiconductor integrated circuit device comprising:
- a first cell row comprising a first standard cell, a second standard cell and a third standard cell arranged in a first direction;
- and
- a second cell row comprising a fourth standard cell and a fifth standard cell arranged in the first direction, and disposed adjacent to the first cell row in a second direction perpendicular to the first direction, wherein
- the first standard cell comprises a first active transistor with a fin structure having a first fin extending in the first direction and disposed closest to a cell row boundary between the first and second cell rows,
- the second standard cell comprises a dummy fin extending in the first direction and disposed at the same position in the second direction as the first fin,
- the third standard cell comprises a second fin extending in the first direction and disposed at the same position in the second direction as the first fin,
- the fourth standard cell comprises a third fin extending in the first direction, and
- the fifth standard cell comprises a fourth fin extending in the first direction and disposed at the same position in the second direction as the third fin.
5 more elements
Dependencies are inferred from the claim text.