Semiconductor structure including plurality of chips along with air gap and manufacturing method thereof

A semiconductor structure, comprising:

• a first chip having a first dielectric surface, the first chip comprising:
• a first conductive line in proximity to the first dielectric surface;
• a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, the second chip comprising:
• a second conductive line in proximity to the second dielectric surface;
• and
• an air gap between the second dielectric surface and the first dielectric surface, the air gap having a width at least substantially equal to a width of the second chip,
• wherein the first conductive line is protruding from the first dielectric surface thereby exposing a sidewall of the first conductive line from the first dielectric surface.

A semiconductor structure, comprising:

• a first chip having a first dielectric surface, the first chip comprising:
• a first inner conductive line under the first dielectric surface;
• a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, the second chip comprising:
• a second inner conductive line above the second dielectric surface;
• a microbump having a height from about 0.3 μm to about 5 μm electrically connecting the first inner conductive line and the second inner conductive line;
• an air gap between the second dielectric surface and the first dielectric surface, and
• a protection layer laterally sealing the air gap.