Semiconductor device with bump structure and method of making semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Haw TSAO, Chen-Shien CHEN, Cheng-Hung TSAI, Kuo-Chin CHANG, Li-Huan CHU
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Abstract
A semiconductor device includes a substrate and at least one bump structure disposed over the substrate. The at least one bump structure includes a pillar formed of a metal having a lower solderability than copper or a copper alloy to a solder alloy disposed over the substrate. A solder alloy is formed directly over and in contact with an upper surface of the metal having the lower solderability than copper or a copper alloy. The pillar has a height of greater than 10 μm.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- at least one bump structure disposed over the substrate,
- wherein the at least one bump structure comprises:
- a pillar formed of a metal having a lower solderability than copper or a copper alloy to a solder alloy disposed over the substrate;
- and
- a solder alloy formed directly over and in contact with an upper surface of the metal having the lower solderability than copper or a copper alloy;
- wherein the pillar has a height of greater than 10 μm.
A semiconductor device, comprising:
- a first substrate including a first circuitry;
- and
- a second substrate;
- wherein the first substrate is connected to the second substrate through a connection comprising a solder layer disposed between a first pillar and a second pillar, and
- wherein the first pillar is formed of a nickel-based material having a height of greater than 10 μm.
A method of fabricating a semiconductor device, comprising:
- forming a photoresist layer over a substrate;
- patterning the photoresist layer to form a plurality of openings exposing the substrate;
- depositing a metal having a lower solderability than copper or a copper alloy material in the plurality of openings;
- forming a solder layer over the metal having a lower solderability than copper or a copper alloy material in the plurality of openings;
- and
- removing the photoresist layer,
- wherein the solder layer is in direct contact with the metal having a lower solderability than copper or a copper alloy material.
Dependencies are inferred from the claim text.