Semiconductor Device and Method of Manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chia Hu, Ching-Pin Yuan, Sung-Feng Yeh, Sen-Bor Jan, Ming-Fa Chen
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Abstract
A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.
Claims20
A semiconductor device, comprising:
- a first die, comprising:
- a first passivation layer disposed on a first substrate;
- and
- first bond pads disposed in the first passivation layer;
- and
- a second die, comprising:
- a second passivation layer, the second passivation layer being bonded to the first passivation layer;
- and
- second bond pads disposed in the second passivation layer, each of the second bond pads being bonded to one of the first bond pads, the second bond pads comprising inner bond pads and outer bond pads, the outer bond pads having a greater diameter than the inner bond pads.
A semiconductor device, comprising:
- a first dielectric layer;
- first metal pads disposed in the first dielectric layer, each of the first metal pads having a first diameter D1, the first metal pads and the first dielectric layer having coplanar top surfaces;
- a second dielectric layer disposed over and bonded to the first dielectric layer;
- and
- second metal pads disposed over and bonded to the first metal pads, the second metal pads comprising:
- an inner set, the inner set having a first maximum diameter;
- and
- an outer set, the outer set forming a concentric ring around the inner set, the outer set having a second maximum diameter, the second maximum diameter being greater than the first diameter and the first maximum diameter.
A method of forming a semiconductor device, the method comprising:
- forming a first die, comprising:
- forming a first dielectric layer over a first substrate;
- patterning the first dielectric layer to form first trenches in the first dielectric layer;
- forming first metal pads in the first trenches, the first metal pads comprising inner metal pads and outer metal pads, the inner metal pads having a first diameter, the outer metal pads having a greater diameter than the first diameter;
- and
- planarizing the first dielectric layer and the first metal pads;
- and
- providing a second die, the second die comprising:
- a second dielectric layer disposed over a second substrate;
- and
- second metal pads disposed in the second dielectric layer, the second metal pads having a second diameter, the second diameter being less than or equal to the first diameter;
- and
- bonding the first die to the second die, the first dielectric layer being bonded to the second dielectric layer, the first metal pads being bonded to the second metal pads.
Dependencies are inferred from the claim text.