Semiconductor device and manufacturing method of semiconductor device
AssigneeLapis Semiconductor Co., Ltd.
InventorMasanori SHINDO
Life of this patent
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Abstract
A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.
Claims20
A semiconductor device, comprising:
- a lower insulating layer formed on a primary surface of a semiconductor substrate;
- a sealing layer formed in contact with a top surface of the lower insulating layer;
- and
- a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with the first conductive member and having a second film thickness that is smaller than the first film thickness.
A semiconductor device, comprising:
- a lower insulating layer formed on a primary surface of a semiconductor substrate;
- a rewiring layer formed on the lower insulating layer and having a first film thickness;
- and
- a shield having a shield portion formed on the lower insulating layer to have a prescribed distance from at least two sides of the rewiring layer, the shield portion having a second film thickness that is smaller than the first film thickness.
A manufacturing method of a semiconductor device, comprising:
- preparing a semiconductor substrate in which an electrode is formed;
- forming a lower insulating layer on a primary surface of the semiconductor substrate, the lower insulating layer having an opening to expose a part of a surface of the electrode;
- forming an underbarrier metal (UBM) film on a surface of the lower insulating layer and the surface of the electrode that is exposed through the opening, the UBM film being made of a sealing layer and a seed layer;
- forming a first conductive member having a first film thickness in a region that corresponds to the opening of the lower insulating layer;
- forming a resist in a region that corresponds to a shield portion on the seed layer;
- and
- removing the UBM film using the resist and the first conductive member as a mask and forming a barrier metal portion.
Dependencies are inferred from the claim text.