Semiconductor device having a protection trench, semiconductor wafer including the same, and semiconductor package
AssigneeSamsung Electronics Co., Ltd.
InventorsSundae Kim, Yun-Rae Cho, Namgyu Baek
Life of this patent
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Abstract
A semiconductor device includes a substrate including a first region and a second region at least partially surrounding the first region in a plan view. A protection pattern is disposed on the second region of the substrate and at least partially surrounds the first region of the substrate in the plan view. A protection trench overlaps the protection pattern and at least partially surrounds the first region of the substrate in the plan view, along the protection pattern. A width of the protection trench is different from a width of the protection pattern.
Claims21
A semiconductor device comprising:
- a substrate including a first region and a second region at least partially surrounding the first region in a plan view;
- a protection pattern disposed on the second region of the substrate and at least partially surrounding the first region of the substrate in the plan view;
- and
- a protection trench overlapping the protection pattern and at least partially surrounding the first region of the substrate in the plan view, along the protection pattern,
- wherein a width of the protection trench is different from a width of the protection pattern.
A semiconductor package comprising:
- a package substrate;
- a semiconductor device disposed on the package substrate;
- and
- a molding layer disposed on the package substrate and covering the semiconductor device,
- wherein the semiconductor device comprises:
- a substrate including a first region and a second region surrounding the first region in a plan view;
- a protection pattern disposed on the second region of the substrate;
- an insulation structure disposed on both the first and second regions of the substrate, the insulation pattern at least partially covering the protection pattern;
- a protection trench within a portion of the insulation structure disposed on the second region of the substrate;
- and
- a connection terminal disposed on a portion of the insulation structure on the first region of the substrate,
- wherein the protection trench is disposed on the protection pattern,
- wherein a width of the protection trench is different from a width of the protection pattern, and
- wherein the molding layer fills the protection trench.
21-29. (canceled)
Dependencies are inferred from the claim text.