Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHSIAO-WEN LEE, HSIU-MEI YU
Life of this patent
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Abstract
The present disclosure provides a semiconductor structure including a first insulation, a second insulation over the first insulation, a third insulation over the second insulation, a first conductor proximal to a boundary between the first insulation and the second insulation, and an electronic device electrically connected to the first conductor and at least partially surrounded by the second insulation. A coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.
Claims20
A semiconductor structure, comprising:
- a first insulation;
- a second insulation over the first insulation;
- a third insulation over the second insulation;
- a first conductor proximal to a boundary between the first insulation and the second insulation;
- and
- an electronic device electrically connected to the first conductor and at least partially surrounded by the second insulation, wherein
- a coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.
A semiconductor structure, comprising:
- a first insulation;
- a second insulation over the first insulation;
- a die over the second insulation;
- a first conductor proximal to a boundary between the first insulation and the second insulation;
- and
- an electronic device bonded with the first conductor and at least partially surrounded by the second insulation and electrically connected to the die, wherein
- a coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the die.
A method of manufacturing a semiconductor structure, comprising:
- forming a first insulation;
- forming a first conductor on the first insulation;
- forming a second insulation over the first conductor and the first insulation;
- bonding an electronic device on the first conductor;
- embedding the electronic device in the second insulation;
- and
- forming a third insulation over the electronic device and the second insulation;
- wherein
- a coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.
Dependencies are inferred from the claim text.