Seal ring structure, semiconductor die, and method for detecting cracks on semiconductor die

A semiconductor die, comprising:

• a semiconductor substrate;
• an integrated circuit region on the semiconductor substrate;
• and
• a first seal ring on the semiconductor substrate, comprising:
• a first interconnect element completely surrounding the integrated circuit region, and formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate;
• and
• a plurality of second interconnect elements formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate,
• wherein the second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.

A method for detecting cracks on a semiconductor die, comprising:

• forming a seal ring on a semiconductor substrate of the semiconductor die, wherein the seal ring comprises:
• a first interconnect element completely surrounding the integrated circuit region, and formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate;
• and
• a plurality of second interconnect elements formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate;
• measuring, using at least one sensing circuit, the resistance of a portion of the semiconductor substrate between two of the second interconnect elements through the seal ring;
• and
• determining whether a crack is present in the portion of the semiconductor substrate according to the resistance of the portion of the semiconductor substrate.