Semiconductor device and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Chieh HSIEH, Hau TAO, Yung-Tien KUO
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Abstract
A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
Claims20
A semiconductor device, comprising:
- an interposer disposed on a substrate, wherein a first major surface of the interposer faces the substrate;
- a chip disposed on a second major surface of the interposer, wherein the second major surface of the interposer opposes the first major surface of the interposer;
- a first passive device disposed in the second major surface of the interposer;
- and
- a second passive device disposed in the first major surface of the interposer, wherein the second passive device is different than the first passive device.
A semiconductor device, comprising:
- a silicon interposer having a first major surface and a second major surface opposing the first major surface;
- a plurality of deep trench capacitors in the second major surface of the interposer;
- a plurality of magnetic core inductors formed in a layer on the first major surface of the interposer;
- and
- a plurality of semiconductor chips having integrated circuits disposed on the second major surface of the interposer electrically connected to the interposer,
- wherein the interposer is disposed on a substrate and the first major surface of the interposer faces the substrate and is electrically connected to the substrate.
A method of fabricating a semiconductor device, comprising:
- forming a plurality of deep trench capacitors in a second major surface of a silicon interposer;
- forming a layer comprising a plurality of magnetic core inductors on a first major surface of a silicon interposer;
- forming a plurality of bumps on the second major surface of the silicon interposer;
- forming a plurality of solder bumps on the first major surface of the silicon interposer;
- soldering the interposer to a substrate through the plurality of solder bumps so that the first major surface of the interposer faces the substrate;
- and
- soldering a plurality of semiconductor chips including integrated circuits to the second major surface of the interposer.
Dependencies are inferred from the claim text.