US 2019/0164899 A1 · System and Method for Aligned Stitching

Abstract

A method for manufacturing semiconductor devices include steps of depositing a first photoresist over a first dielectric layer, first exposing the first photoresist to a first light-exposure using a first lithographic mask, and second exposing the first photoresist to a second light-exposure using a second lithographic mask. An overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure. The first dielectric layer is thereafter patterned to form a mask overlay alignment mark in the overlap region. The patterning includes etching the first dielectric layer form a trench, and filling the trench with a conductive material to produce the alignment mark. A second dielectric layer is deposited over the alignment mark, and a second photoresist is deposited over the second dielectric layer. A third lithographic mask is aligned to the second photoresist using the underlying mask overlay alignment mark for registration.

Claims21

Dependent claims

A method, comprising:

depositing a first dielectric layer over a substrate;
depositing a first photoresist over the first dielectric layer;
exposing the first photoresist to a first light-exposure through a first lithographic mask;
after exposing the first photoresist to the first light-exposure, exposing the first photoresist to a second light-exposure through a second lithographic mask, wherein:
a first overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure;
the first overlap region is interposed between a first active signal region and a second active signal region;
the first active signal region and the second active signal region are disposed in a same die;
the first light-exposure is used to image the first active signal region;
and
the second light-exposure is used to image the second active signal region;
and
after the exposing the first photoresist to the second light-exposure, developing the first photoresist and patterning the first dielectric layer to form a first mask overlay alignment feature, the first mask overlay alignment feature disposed in the first overlap region.

9 more elements

Dependencies are inferred from the claim text.

System and Method for Aligned Stitching

Life of this patent

System and Method for Aligned Stitching

Life of this patent

Abstract

Claims21