Interconnect Structures and Methods of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Li Wang, Yasutoshi Okuno
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Abstract
Embodiments described herein relate generally to one or more methods for forming an interconnect structure, such as a dual damascene interconnect structure comprising a conductive line and a conductive via, and structures formed thereby. In some embodiments, an interconnect opening is formed through one or more dielectric layers over a semiconductor substrate. The interconnect opening has a via opening and a trench over the via opening. A conductive via is formed in the via opening. A nucleation enhancement treatment is performed on one or more exposed dielectric surfaces of the trench. A conductive line is formed in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.
Claims20
A method comprising:
- forming an interconnect opening through one or more dielectric layers over a semiconductor substrate, the interconnect opening having a via opening and a trench over the via opening;
- forming a conductive via in the via opening;
- performing a nucleation enhancement treatment on one or more exposed dielectric surfaces of the trench;
- and
- forming a conductive line in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.
A structure comprising:
- a semiconductor substrate;
- one or more dielectric layers over the semiconductor substrate;
- and
- an interconnect structure disposed in the one or more dielectric layers, the interconnect structure comprising:
- a conductive via;
- and
- a conductive line over the conductive via, the conductive line being disposed over a horizontal surface of the one or more dielectric layers, a same species being disposed at the horizontal surface of the one or more dielectric layers and an upper surface of the conductive via at an interface between the conductive via and a conductive fill material of the conductive line.
A method comprising:
- forming a dual damascene opening through one or more dielectric layers over a semiconductor substrate, wherein the dual damascene opening includes a trench and a via opening;
- forming a conductive via in the via opening;
- increasing a number of nucleation sites on dielectric surfaces exposed in the trench by breaking chemical bonds of the dielectric surfaces exposed in the trench;
- and
- depositing a conductive fill material in the trench by adsorbing the conductive fill material on the increased number of nucleation sites, wherein depositing the conductive fill material does not include using a seed layer.
Dependencies are inferred from the claim text.