Semiconductor module, method for manufacturing the same and power conversion apparatus
AssigneeMitsubishi Electric Corporation
InventorYasuo TANAKA
Life of this patent
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Abstract
A conductive thin-film thinner than the undersurface electrode is provided outside the undersurface electrode on the undersurface of the ceramic substrate and connected to the undersurface electrode. A length from an outer circumferential part of the undersurface electrode to an outer circumferential pert of the ceramic substrate is equal to a length from an outer circumferential part of the top surface electrode to an outer circumferential part of the ceramic substrate. A thickness of the conductive thin-film is half or less than a thickness of the ceramic substrate.
Claims18
A semiconductor module comprising:
- a base plate;
- a ceramic substrate provided on the base plate;
- an undersurface electrode provided on an undersurface of the ceramic substrate and bonded to the base plate;
- a top surface electrode provided on a top surface of the ceramic substrate;
- a semiconductor chip bonded to the top surface electrode;
- a conductive thin-film made of a material different from a material of the undersurface electrode, provided outside the undersurface electrode on the undersurface of the ceramic substrate, connected to the undersurface electrode and being thinner than the undersurface electrode;
- and
- an insulating resin sealing the ceramic substrate, the undersurface electrode, the top surface electrode, the semiconductor chip and the conductive thin-film,
- wherein a length from an outer circumferential part of the undersurface electrode to an outer circumferential part of the ceramic substrate is equal to a length from an outer circumferential part of the top surface electrode to the outer circumferential part of the ceramic substrate, and
- a thickness of the conductive thin-film is half or less than a thickness of the ceramic substrate.
A method for manufacturing a semiconductor module, the semiconductor module comprising:
- a base plate;
- a ceramic substrate provided on the base plate;
- an undersurface electrode provided on an undersurface of the ceramic substrate and bonded to the base plate;
- a top surface electrode provided on a top surface of the ceramic substrate;
- a semiconductor chip bonded to the top surface electrode;
- a conductive thin-film provided outside the undersurface electrode on the undersurface of the ceramic substrate, connected to the undersurface electrode and being thinner than the undersurface electrode;
- and
- an insulating resin sealing the ceramic substrate, the undersurface electrode, the top surface electrode, the semiconductor chip and the conductive thin-film,
- wherein a length from an outer circumferential part of the undersurface electrode to an outer circumferential part of the ceramic substrate is equal to a length from an outer circumferential part of the top surface electrode to the outer circumferential part of the ceramic substrate, and
- a thickness of the conductive thin-film is half or less than a thickness of the ceramic substrate,
- the method comprising:
- forming a plating layer on the undersurface of the ceramic substrate and the undersurface electrode;
- and
- patterning the plating layer to form the conductive thin-film.
Dependencies are inferred from the claim text.