Semiconductor structure cutting process and structures formed thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wen HUANG, Chia-Hui LIN, Jaming CHANG, Jei Ming CHEN, Kai Hung CHENG
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Abstract
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
Claims20
A structure comprising:
- a first fin on a substrate;
- a second fin on the substrate, the first fin and the second fin being longitudinally aligned;
- and
- a fin cut-fill structure disposed between the first fin and the second fin, the fin cut-fill structure comprising:
- an insulating liner abutting a first sidewall of the first fin and a second sidewall of the second fin, the insulating liner comprising a material with a band gap greater than 5 eV;
- and
- a fill material on the insulating liner.
A structure comprising:
- an insulator structure disposed laterally between a first fin and a second fin that are longitudinally aligned on a substrate, the insulator structure comprising:
- a high band gap liner disposed along respective end sidewalls of the first fin and the second fin, the high band gap liner having a band gap greater than 5 eV;
- and
- a fill material on the high band gap liner.
A method comprising:
- forming a fin on a substrate;
- cutting the fin into a first section of the fin and a second section of the fin by forming a cut opening between the first section of the fin and the second section of the fin;
- forming a conformal liner layer in the cut opening, the conformal liner layer comprising a material with a band gap greater than 5 eV;
- and
- forming a fill material on the conformal liner layer in the cut opening.
Dependencies are inferred from the claim text.