Homogeneous densification of fill layers for controlled reveal of vertical fins

A method of controlling the revealed height of a plurality of vertical fins, comprising:

• forming a plurality of vertical fins on a substrate;
• forming an inner liner on the sidewalls of each of the plurality of vertical fins;
• forming a sacrificial layer on the inner liner;
• introducing a dopant into a portion of the sacrificial layer, wherein a portion of the sacrificial layer remains undoped;
• forming a flowable oxide fill layer between each adjacent pair of the plurality of vertical fins, wherein the fill layer is in contact with the undoped portion of the sacrificial layer;
• removing at least a portion of the undoped portion of the sacrificial layer in contact with the fill layer to form sidewall channels adjacent to the fill layer;
• subjecting the fill layer to a densification process to form a densified fill layer;
• and
• forming a channel packing layer in the sidewall channels.

A vertical fin field effect transistor, comprising:

• a pair of adjacent vertical fins on a substrate;
• an inner liner on a lower portion of the sidewalls of the adjacent vertical fins;
• a channel packing layer on the inner liner;
• a densified fill layer between the pair of adjacent vertical fins, wherein the densified fill layer is in contact with the channel packing layer;
• a gate dielectric layer on at least a portion of the adjacent vertical fins, inner liner, channel packing layer, and densified fill layer;
• and
• a conductive gate layer on at least a portion of the gate dielectric layer.