Prevention of Contact Bottom Void in Semiconductor Fabrication

A method comprising:

• receiving a substrate that includes a fin extending from a remainder of the substrate and an interlevel dielectric disposed on and alongside the fin;
• forming a first recess in the interlevel dielectric over the fin and a second recess in the interlevel dielectric alongside the fin that extends deeper than the first recess;
• forming a dielectric layer within the first recess and the second recess;
• selectively removing a portion of the dielectric layer from the bottom of the first recess such that the dielectric layer remains at the bottom of the second recess;
• and
• forming a first contact in the first recess coupled to the fin and a second contact in the second recess.

A semiconductor device comprising:

• a substrate;
• a fin extending from the substrate;
• a source/drain feature disposed on the fin;
• an interlevel dielectric disposed on and alongside the fin;
• a first contact extending through the interlevel dielectric and coupled to the source/drain feature;
• a second contact extending through the interlevel dielectric to a depth greater than the first contact;
• and
• a protective layer that includes a first portion disposed alongside the first contact and a second portion disposed alongside and underneath the second contact.