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US 2019/0164838 A1Published application
Semiconductor device and formation method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChang-Yun CHANG, Bone-Fong WU, Ming-Chang WEN, Ya-Hsiu LIN
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Abstract
A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer in the first trench; and filling the first trench with a dielectric feature.
Claims21
1-17. (canceled)
A semiconductor device, comprising:
- a substrate having first and second fins;
- a plurality of gate structures over a plurality of first portions of the first and second fins respectively;
- a dielectric feature over the substrate and not overlapping the first and second fins;
- and
- a helmet layer between the dielectric feature and at least one of a plurality of second portions of the first and second fins.
2 more elements
A semiconductor device, comprising:
- a substrate having first and second fins;
- a first gate structure over the first fin;
- a second gate structure over the second fin;
- a dielectric feature over the substrate and not overlapping the first and second fins, wherein the dielectric feature has a first dielectric portion between the first and second gate structures and a second dielectric portion connected with the first dielectric portion;
- and
- a helmet layer surrounds the second dielectric portion of the dielectric feature.
3 more elements
A semiconductor device, comprising:
- a substrate having a fin;
- a gate structure over the fin;
- a dielectric feature over the substrate and not overlapping the fin;
- and
- a plurality of helmet portions between the fin and the dielectric feature, and the gate structure separates the helmet portions from each other.
2 more elements
Dependencies are inferred from the claim text.