Semiconductor device and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, SMIC New Technology Research and Development (Shanghai) Corporation
InventorFei ZHOU
Life of this patent
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Abstract
A semiconductor device and fabrication method thereof are provided. The method includes: providing a base substrate with first gate structures on the base substrate; forming a spacer covering sidewalls of each first gate structure; forming sacrificial layers on sides of each first gate structure to cover corresponding spacers; forming a bottom dielectric layer covering sidewalls of the sacrificial layers; after forming the bottom dielectric layer, removing the sacrificial layers by etching to form first openings between the bottom dielectric layer and the spacer; and forming a plug in each first opening.
Claims20
A fabrication method for a semiconductor device, comprising:
- forming a base substrate and first gate structures on the base substrate;
- forming a spacer covering sidewalls of each first gate structure;
- forming sacrificial layers on sidewalls of each first gate structure to cover corresponding spacers;
- forming a bottom dielectric layer covering sidewalls of the sacrificial layers;
- after forming the bottom dielectric layer, removing the sacrificial layers to form first openings between the bottom dielectric layer and the spacers;
- and
- forming a plug in each first opening.
A semiconductor device, including:
- a base substrate,
- a fin protruding from the base substrate;
- gate structures on the fin;
- source/drain doped layers in the base substrate on sides of each gate structure;
- an offset spacer on each sidewall of each gate structure;
- a spacer covering each sidewall of the offset spacer on each sidewall of the gate structures;
- a bottom dielectric layer on the base substrate;
- and
- a plug between the spacer and the bottom dielectric layer.
Dependencies are inferred from the claim text.