Self-aligned contact and method for forming the same
AssigneeMediatek Inc.
InventorHsien-Hsin Lin
Life of this patent
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Abstract
A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures including spacers on opposite sides. The method also includes forming a sacrificial layer between the gate structures. The method also includes forming a mask layer on a part of the sacrificial layer. The method also includes forming a plurality of first openings by removing the sacrificial layer exposed from the mask layer. The method also includes forming a dielectric layer in the plurality of first openings. The method also includes removing the mask layer. The method also includes forming a plurality of second openings by removing the sacrificial layer that remains on the substrate. The method also includes forming a plurality of first contact plugs in the second openings.
Claims20
A method for forming a self-aligned contact, comprising:
- providing a substrate with a plurality of gate structures including spacers on opposite sides;
- forming a sacrificial layer between the plurality of gate structures;
- forming a mask layer on a part of the sacrificial layer;
- forming a plurality of first openings by removing the sacrificial layer exposed from the mask layer;
- forming a dielectric layer in the plurality of first openings;
- removing the mask layer;
- forming a plurality of second openings by removing the sacrificial layer remaining on the substrate;
- and
- forming a plurality of first contact plugs in the second openings.
A self-aligned contact, comprising:
- a plurality of gate structures including spacers on opposite sides on a substrate;
- a dielectric layer disposed between the gate structures;
- and
- a plurality of first contact plugs disposed between the gate structures in the dielectric layer;
- wherein the spacer has a planar top surface.
Dependencies are inferred from the claim text.